Behavioral comparison of Si and SiC power MOSFETs for high-frequency applications

Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

Volumn , Issue , 2013, Pages 2453-2460

  Chen, Zheng ^a   Boroyevich, Dushan ^a   Li, Jin ^b  

^a Virginia Polytechnic Institute and State University   (United States)

^b Shanghai Sieyuan Electric Co Ltd   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COMPREHENSIVE COMPARISONS; DESIGN CONSIDERATIONS; DEVICE CHARACTERISTICS; HIGH-FREQUENCY APPLICATIONS; LOSS DISTRIBUTION; STATIC CHARACTERISTIC; SWITCHING PERFORMANCE; TEMPERATURE BEHAVIOR;

DC-DC CONVERTERS; POWER ELECTRONICS; SILICON; SILICON CARBIDE;

MOSFET DEVICES;

EID: 84879325025     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/APEC.2013.6520640     Document Type: Conference Paper

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