Zero voltage switching performance of 1200V SiC MOSFET, 1200V silicon IGBT and 900V CoolMOS MOSFET

IEEE Energy Conversion Congress and Exposition: Energy Conversion Innovation for a Clean Energy Future, ECCE 2011, Proceedings

Volumn , Issue , 2011, Pages 1819-1826

  Kadavelugu, Arun ^a   Baliga, Vinay ^a   Bhattacharya, Subhashish ^a   Das, Mrinal ^b   Agarwal, Anant ^b  

^a North Carolina State University   (United States)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CDS; CONVERTER TOPOLOGIES; COOLMOS; DRAIN VOLTAGE; DUAL ACTIVE BRIDGES; HIGH POWER CONVERTERS; HIGH-POWER; LC RESONANCE; LEAKAGE INDUCTANCE; LOW CURRENTS; LOW LOSS; MOS-FET; MOSFETS; SIC MOSFET; TURN-OFF TIME; UNIQUE FEATURES; ZERO VOLTAGE;

CAPACITANCE; DC POWER TRANSMISSION; DC-DC CONVERTERS; DRAIN CURRENT; ENERGY CONVERSION; HIGH FREQUENCY TRANSFORMERS; MOSFET DEVICES; SILICON CARBIDE; ZERO VOLTAGE SWITCHING;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 81855177139     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECCE.2011.6064006     Document Type: Conference Paper

References (8)

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