Hydrogen-related n -type conductivity in hydrothermally grown epitaxial ZnO films

Journal of Applied Physics

Volumn 108, Issue 8, 2010, Pages

  Zhang, Y B ^a,b   Goh, G K L ^a   Ooi, K F ^a   Tripathy, S ^a  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^b UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; CARRIER DENSITY; GROWTH SOLUTIONS; HALL MEASUREMENTS; HYDROTHERMALLY; LOW TEMPERATURE PHOTOLUMINESCENCE; N-TYPE CONDUCTIVITY; PH VALUE; POSTGROWTH ANNEALING; ROOM TEMPERATURE; SECONDARY ION MASS SPECTROSCOPY; SHALLOW DONORS; ZNO; ZNO FILMS;

EPITAXIAL FILMS; HYDROGEN; METALLIC FILMS; SECONDARY ION MASS SPECTROMETRY; SINGLE CRYSTALS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

CARRIER CONCENTRATION;

EID: 78149450389     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3500353     Document Type: Article

References (21)

1. R. Triboulet and J. Perriere, Prog. Cryst. Growth Charact. Mater. PCGMED 0960-8974 47, 65 (2003). 10.1016/j.pcrysgrow.2005.01.003
2. S. B. Zhang, S. -H. Wei, and A. Zunger, Phys. Rev. B PLRBAQ 0556-2805 63, 075205 (2001). 10.1103/PhysRevB.63.075205
3. U. Özgür, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Dogan, V. Avrutin, S. J. Cho, and H. Morkoc, J. Appl. Phys. JAPIAU 0021-8979 98, 041301 (2005). 10.1063/1.1992666
4. K. Minegishi, Y. Koiwai, Y. Kikuchi, K. Yano, M. Kasuga, and A. Shimizu, Jpn. J. Appl. Phys., Part 2 JAPLD8 0021-4922 36, L1453 (1997). 10.1143/JJAP.36.L1453
5. M. Joseph, H. Tabata, and T. Kawai, Jpn. J. Appl. Phys., Part 2 JAPLD8 0021-4922 38, L1205 (1999). 10.1143/JJAP.38.L1205
6. C. G. Van de Walle, Phys. Rev. Lett. PRLTAO 0031-9007 85, 1012 (2000). 10.1103/PhysRevLett.85.1012
7. . Kļ and A. Zunger, Appl. Phys. Lett. APPLAB 0003-6951 81, 73 (2002). 10.1063/1.1482783
8. G. A. Shi, M. Stavola, S. J. Pearton, M. Thieme, E. V. Lavrov, and J. Weber, Phys. Rev. B PLRBAQ 0556-2805 72, 195211 (2005). 10.1103/PhysRevB.72. 195211
9. E. V. Lavrov, F. Borrnert, and J. Weber, Phys. Rev. B PLRBAQ 0556-2805 72, 085212 (2005). 10.1103/PhysRevB.72.085212
10. D. Andeen, L. Loeffler, N. Padture, and F. F. Lange, J. Cryst. Growth JCRGAE 0022-0248 259, 103 (2003). 10.1016/S0022-0248(03)01589-6
11. D. Andeen, J. H. Kim, F. F. Lange, G. K. L. Goh, and S. Tripathy, Adv. Funct. Mater. AFMDC6 1616-301X 16, 799 (2006). 10.1002/adfm.200500817
12. A. T. Chien, J. S. Speck, and F. F. Lange, J. Mater. Res. JMREEE 0884-2914 12, 1176 (1997). 10.1557/JMR.1997.0163
13. A. T. Chien, X. Xu, J. H. Kim, J. Sachleben, J. Speck, and F. F. Lange, J. Mater. Res. JMREEE 0884-2914 14, 3330 (1999). 10.1557/JMR.1999.0451
14. R. B. Heller, J. McGannon, and A. H. Weber, J. Appl. Phys. JAPIAU 0021-8979 21, 1283 (1950). 10.1063/1.1699591
15. S. Major, S. Kumar, M. Bhatnagar, and K. L. Chopra, Appl. Phys. Lett. APPLAB 0003-6951 49, 394 (1986). 10.1063/1.97598
16. H. S. Kang, J. S. Kang, J. W. Kim, and S. Y. Lee, J. Appl. Phys. JAPIAU 0021-8979 95, 1246 (2004). 10.1063/1.1633343
17. Q. X. Zhao, P. Klason, M. Willander, H. M. Zhong, W. Lu, and J. H. Yang, Appl. Phys. Lett. APPLAB 0003-6951 87, 211912 (2005). 10.1063/1.2135880
18. B. Lin, Z. Fu, and Y. Jia, Appl. Phys. Lett. APPLAB 0003-6951 79, 943 (2001). 10.1063/1.1394173
19. Y. W. Heo, D. P. Norton, and S. J. Pearton, J. Appl. Phys. JAPIAU 0021-8979 98, 073502 (2005). 10.1063/1.2064308
20. W. Shan, W. Walukiewicz, J. W. Ager III, K. M. Yu, H. B. Yuan, H. P. Xin, G. Cantwell, and J. J. Song, Appl. Phys. Lett. APPLAB 0003-6951 86, 191911 (2005). 10.1063/1.1923757
21. B. K. Meyer, H. Alves, D. M. Hofmann, W. Kriegseis, D. Forster, F. Bertram, J. Christen, A. Hoffmann, M. Straβburg, M. Dworzak, U. Haboeck, and A. V. Rodina, Phys. Status Solidi B PSSBBD 0370-1972 241, 231 (2004). 10.1002/pssb.200301962