Surface-based manipulation of point defects in rutile TiO2

Applied Physics Letters

Volumn 102, Issue 23, 2013, Pages

  Hollister, Alice G ^a   Gorai, Prashun ^a   Seebauer, Edmund G ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC BAND; OXYGEN INTERSTITIALS; RUTILE TIO; SELF-DIFFUSION MEASUREMENT; SURFACE-BASED; TIO;

OXIDE MINERALS; OXYGEN; POINT DEFECTS;

TITANIUM DIOXIDE;

EID: 84879075935     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4810073     Document Type: Article

References (49)

1. G. Korotcenkov, Mater. Sci. Eng., B 139, 1 (2007). 10.1016/j.mseb.2007. 01.044
2. D. B. Strukov, G. S. Snider, D. R. Steward, and R. S. Williams, Nature 453, 80 (2008). 10.1038/nature06932
3. Z. Yang, C. Ko, and S. Ramanathan, Annu. Rev. Mater. Res. 41, 337 (2011). 10.1146/annurev-matsci-062910-100347
4. A. B. Djurišić and Y. H. Leung, Small 2, 944 (2006). 10.1002/smll.200600134
5. M. Batzill, Energy Environ. Sci. 4, 3275 (2011). 10.1039/c1ee01577j
6. Z. Zhang and J. T. Yates, Chem. Rev. 112, 5520 (2012). 10.1021/cr3000626
7. S. H. Yeong, M. P. Srinivasan, B. Colombeau, L. Chan, R. Akkipeddi, C. T. M. Kwok, R. Vaidyanathan, and E. G. Seebauer, Appl. Phys. Lett. 91, 102112 (2007). 10.1063/1.2780080
8. E. G. Seebauer, K. Dev, M. Y. L. Jung, R. Vaidyanathan, C. T. M. Kwok, J. W. Ager, E. E. Haller, and R. D. Braatz, Phys. Rev. Lett. 97, 055503 (2006). 10.1103/PhysRevLett.97.055503
9. H. Kamisaka and K. Yamashita, J. Phys. Chem. C 115, 8265 (2011). 10.1021/jp110648q
10. S. Na-Phattalung, M. F. Smith, K. Kim, M.-H. Du, S.-H. Wei, S. B. Zhang, and S. Limpijumnong, Phys. Rev. B 73, 125205 (2006). 10.1103/PhysRevB.73.125205
11. P. Shewmon, Diffusion in Solids (Minerals, Metals Materials Society, Warrendale, PA, 1989).
12. K. F. McCarty, J. A. Nobel, and N. C. Bartelt, Nature 412, 622 (2001). 10.1038/35088026
13. P. M. Fahey, P. B. Griffin, and J. D. Plummer, Rev. Mod. Phys. 61, 289 (1989). 10.1103/RevModPhys.61.289
14. E. Chason, S. T. Picraux, J. M. Poate, J. O. Borland, M. I. Current, T. D. Rubia, D. J. Eaglesham, O. W. Holland, M. E. Law, C. W. Magee, J. W. Mayer, J. Melngailis, and A. F. Tasch, J Appl. Phys. 81, 6513 (1997). 10.1063/1.365193
15. I. E. Wachs and B. M. Weckhuysen, Appl. Catal., A 157, 67 (1997) 10.1016/S0926-860X(97)00021-5.
16. M. Arita, M. Hosoya, M. Kobayashi, and M. Someno, J. Am. Ceram. Soc. 62, 443 (1979) 10.1111/j.1151-2916.1979.tb19101.x.
17. T. B. Gruenwald and G. Gordon, J. Inorg. Nucl. Chem. 33, 1151 (1971). 10.1016/0022-1902(71)80184-7
18. D. J. Derry, D. G. Lees, and J. M. Calvert, J. Phys. Chem. Solids 42, 57 (1981). 10.1016/0022-3697(81)90011-1
19. P. Gorai, Y. V. Kondratenko, and E. G. Seebauer, J. Appl. Phys. 111, 094510 (2012). 10.1063/1.4714556
20. N. E. B. Cowern, G. F. A. van de Walle, D. J. Gravesteijn, and C. J. Vriezema, Phys. Rev. Lett. 67, 212 (1991). 10.1103/PhysRevLett.67.212
21. R. Vaidyanathan, M. Y. L. Jung, R. D. Braatz, and E. G. Seebauer, AIChE J. 52, 366 (2006). 10.1002/aic.10587
22. D. K. Moore, D. J. Cherniak, and E. B. Watson, Am. Mineral. 83, 700 (1998).
23. P. Gorai, A. G. Hollister, and E. G. Seebauer, ECS J. Solid State Sci. Technol. 1, Q21 (2012). 10.1149/2.011202jss
24. D. K. Lee and H. I. Yoo, Solid State Ionics 177, 1 (2006). 10.1016/j.ssi.2005.10.016
25. R. Haul and G. Dümbgen, J. Phys. Chem. Solids 26, 1 (1965). 10.1016/0022-3697(65)90066-1
26. E. L. D. Hebenstreit, W. Hebenstreit, H. Geisler, C. A. Ventrice, Jr., P. T. Sprunger, and U. Diebold, Surf. Sci. 486, L467 (2001). 10.1016/S0039- 6028(01)01067-6
27. W. Heegemann, K. H. Meister, E. Bechtold, and K. Hayek, Surf. Sci. 49, 161 (1975). 10.1016/0039-6028(75)90334-9
28. P. Erhart and K. Albe, Phys. Rev. B 73, 115207 (2006). 10.1103/PhysRevB.73.115207
29. H. Gui-Yang, W. Chong-Yu, and W. Jian-Tao, J. Phys. Condens. Matter 21, 195403 (2009) 10.1088/0953-8984/21/19/195403.
30. H. Lee, S. J. Clark, and J. Robertson, Phys. Rev. B 86, 075209 (2012). 10.1103/PhysRevB.86.075209
31. H. Peng, Phys. Lett. A 372, 1527 (2008). 10.1016/j.physleta.2007.10.011
32. B. J. Morgan and G. W. Watson, J. Phys. Chem. C 114, 2321 (2010). 10.1021/jp9088047
33. T. Bak, J. Nowotny, and M. K. Nowotny, J. Phys. Chem. B 110, 21560 (2006). 10.1021/jp063700k
34. H. Iddir, S. Öǧüt, P. Zapol, and N. D. Browning, Phys. Rev. B 75, 073203 (2007). 10.1103/PhysRevB.75.073203
35. B. P. Uberuaga and X. Bai, J. Phys. Condens. Matter 23, 435004 (2011). 10.1088/0953-8984/23/43/435004
36. M. A. Henderson, Surf. Sci. 419, 174 (1999). 10.1016/S0039-6028(98)00778- X
37. C. T. M. Kwok, K. Dev, R. D. Braatz, and E. G. Seebauer, J. Appl. Phys. 98, 013524 (2005). 10.1063/1.1946195
38. E. G. Seebauer and M. C. Kratzer, Charged Semiconductor Defects: Structure, Thermodynamics and Diffusion (Springer-Verlag, London, 2009).
39. J. Nowotny and T. Bak, Proc. SPIE 7408, 74080A (2009). 10.1117/12.824509
40. A. C. S. Sabioni, M. J. F. Ramos, and W. B. Ferraz, Mater. Res. 6, 173 (2003) 10.1590/S1516-14392003000200011.
41. J. A. Van Vechten and C. D. Thurmond, Phys. Rev. B 14, 3539 (1976). 10.1103/PhysRevB.14.3539
42. C. E. Allen, R. Ditchfield, and E. G. Seebauer, J. Vac. Sci. Technol. A14, 22 (1996) 10.1116/1.579925.
43. H. L. Tuller and S. R. Bishop, Annu. Rev. Mater. Res. 41, 369 (2011). 10.1146/annurev-matsci-062910-100442
44. T. Bak, P. Bogdanoff, S. Fiechter, and J. Nowotny, Adv. Appl. Ceram. 111, 62 (2012). 10.1179/1743676111Y.0000000027
45. A. Templeton, X. Wang, S. J. Penn, S. J. Webb, L. F. Cohen, and N. McN. Alford, J. Am. Ceram. Soc. 83, 95 (2000). 10.1111/j.1151-2916.2000.tb01154.x
46. N. MacN. Alfrod, J. Breeze, X. Wang, S. J. Penn, S. Dalla, S. J. Webb, N. Ljepojevic, and X. Aupi, J. Eur. Ceram. Soc. 21, 2605 (2001) 10.1016/S0955-2219(01)00324-7.
47. J. A. Gamboa and D. M. Pasquevich, J. Am. Ceram. Soc. 75, 2934 (1992). 10.1111/j.1151-2916.1992.tb04367.x
48. D. A. H. Hanaor and C. C. Sorrell, J. Mater. Sci. 46, 855 (2011). 10.1007/s10853-010-5113-0
49. J. K. Park, K. B. Shim, K. H. Auh, and I. Tanaka, J. Cryst. Growth 237-239, 730 (2002) 10.1016/S0022-0248(01)01989-3.