Estimations of bulk geometrically necessary dislocation density using high resolution EBSD

Ultramicroscopy

Volumn 133, Issue , 2013, Pages 8-15

  Ruggles, T J ^a   Fullwood, D T ^a  

^a Brigham Young University   (United States)

Author keywords

Continuum dislocation microscopy; Dislocation density; EBSD; Nye tensor

Indexed keywords

DISLOCATION DENSITIES; DISLOCATION DENSITY TENSORS; EBSD; ELECTRON BACK SCATTER DIFFRACTION; GEOMETRICALLY NECESSARY DISLOCATION DENSITIES; GEOMETRICALLY NECESSARY DISLOCATIONS; LATTICE DISTORTIONS; NYE TENSORS;

CRYSTALLINE MATERIALS; ESTIMATION; GEOMETRY; TENSORS;

SINGLE CRYSTALS;

ARTICLE; BULK DENSITY; CONTROLLED STUDY; CRYSTAL STRUCTURE; ELECTRON BACKSCATTER DIFFRACTION; ELECTRON DIFFRACTION; GEOMETRICALLY NECESSARY DISLOCATION DENSITY; GEOMETRY; IMAGE QUALITY; MATERIAL STATE; MATHEMATICAL COMPUTING; MATHEMATICAL PARAMETERS; NYE TENSOR; OPTICAL RESOLUTION; PROCESS DEVELOPMENT; SIMULATION; STRUCTURE ANALYSIS; VALIDATION PROCESS;

CONTINUUM DISLOCATION MICROSCOPY; DISLOCATION DENSITY; EBSD; NYE TENSOR;

ELECTRONS; MICROSCOPY, ELECTRON, TRANSMISSION;

EID: 84878908357     PISSN: 03043991     EISSN: 18792723     Source Type: Journal    
DOI: 10.1016/j.ultramic.2013.04.011     Document Type: Article

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