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Volumn 117, Issue , 2013, Pages 29-33

Study on permanent deactivation of the light-induced degradation in p-type compensated crystalline silicon solar cells

Author keywords

Cell efficiency; Crystalline silicon solar cell; Dopant compensation; Light induced degradation; Minority carrier diffusion length

Indexed keywords

CELL EFFICIENCY; CRYSTALLINE SILICON SOLAR CELLS; DOPANT COMPENSATIONS; LIGHT-INDUCED DEGRADATION; MINORITY CARRIER DIFFUSION LENGTH;

EID: 84878819262     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2013.05.025     Document Type: Article
Times cited : (8)

References (20)
  • 1
    • 0012723401 scopus 로고    scopus 로고
    • Injection level dependence of the defect-related carrier lifetime in light-degraded boron-doped Czochralski silicon
    • DOI 10.1063/1.122411, PII S0003695198035414
    • J. Schmidt, C. Berge, and A. Aberle Injection level dependence of the defect-related carrier lifetime in light-degraded boron-doped Czochralski silicon Applied Physics Letters 73 1998 2167 2169 (Pubitemid 128672102)
    • (1998) Applied Physics Letters , vol.73 , Issue.15 , pp. 2167-2169
    • Schmidt, J.1    Berge, C.2    Aberle, A.G.3
  • 2
    • 0033365078 scopus 로고    scopus 로고
    • Comparison of boron- and gallium-doped p-type Czochralski silicon for photovoltaic application
    • DOI 10.1002/(SICI)1099-159X(199911/12)7:6<463::AID-PIP293>3.0.CO;2- H
    • S.W. Glunz, S. Rein, J. Knobloch, W. Wettling, and T. Abe Comparison of boron- and gallium-doped p-type Czochralski silicon for photovoltaic application Progress in Photovoltaics: Research and Applications 7 1999 463 469 (Pubitemid 30527300)
    • (1999) Progress in Photovoltaics: Research and Applications , vol.7 , Issue.6 , pp. 463-469
    • Glunz, S.W.1    Rein, S.2    Knobloch, J.3    Wettling, W.4    Abe, T.5
  • 3
    • 79955997779 scopus 로고    scopus 로고
    • Oxygen-related minority carrier trappings centers in p-type Czochralski silicon
    • J. Schmidt, K. Bothe, and R. Hezel Oxygen-related minority carrier trappings centers in p-type Czochralski silicon Applied Physics Letters 80 2002 4395 4397
    • (2002) Applied Physics Letters , vol.80 , pp. 4395-4397
    • Schmidt, J.1    Bothe, K.2    Hezel, R.3
  • 4
    • 0037091841 scopus 로고    scopus 로고
    • Generation and annihilation of boron-oxygen related defects in boron-doped Czochralski-grown Si solar cells
    • T.K. Vu, Y. Ohshita, K. Araki, and M. Yamaguchi Generation and annihilation of boron-oxygen related defects in boron-doped Czochralski-grown Si solar cells Journal of Applied Physics 91 2002 4853 4856
    • (2002) Journal of Applied Physics , vol.91 , pp. 4853-4856
    • Vu, T.K.1    Ohshita, Y.2    Araki, K.3    Yamaguchi, M.4
  • 5
    • 0042926667 scopus 로고    scopus 로고
    • Recombination-enhanced formation of the metastable boron-oxygen complex in crystalline silicon
    • K. Bothe, R. Hezel, and J. Schmidt Recombination-enhanced formation of the metastable boron-oxygen complex in crystalline silicon Applied Physics Letters 83 2003 1125 1127
    • (2003) Applied Physics Letters , vol.83 , pp. 1125-1127
    • Bothe, K.1    Hezel, R.2    Schmidt, J.3
  • 6
    • 1442337113 scopus 로고    scopus 로고
    • Structure and transformation of the metastable boron- and oxygen-related defect center in crystalline silicon
    • J. Schmidt, and K. Bothe Structure and transformation of the metastable boron- and oxygen-related defect center in crystalline silicon Physical Review B 69 2004 024107-1 024107-8
    • (2004) Physical Review B , vol.69 , pp. 0241071-0241078
    • Schmidt, J.1    Bothe, K.2
  • 7
    • 0037450271 scopus 로고    scopus 로고
    • Electronic properties of the metastable defect in boron-doped Czochralski silicon: Unambiguous determination by advanced lifetime spectroscopy
    • S. Rein, and S.W. Glunz Electronic properties of the metastable defect in boron-doped Czochralski silicon: unambiguous determination by advanced lifetime spectroscopy Applied Physics Letters 82 2003 1054 1056
    • (2003) Applied Physics Letters , vol.82 , pp. 1054-1056
    • Rein, S.1    Glunz, S.W.2
  • 11
    • 41049105821 scopus 로고    scopus 로고
    • Investigations on the long time behavior of the metastable boron-oxygen complex in crystalline silicon
    • DOI 10.1002/pip.779
    • A. Herguth, G. Schubert, M. Kaes, and G. Hahn Investigations on the long time behavior of the metastable boron-oxygen complex in crystalline silicon Progress in Photovoltaics: Research and Applications 16 2008 135 140 (Pubitemid 351651309)
    • (2008) Progress in Photovoltaics: Research and Applications , vol.16 , Issue.2 , pp. 135-140
    • Herguth, A.1    Schubert, G.2    Kaes, M.3    Hahn, G.4
  • 12
    • 54949141878 scopus 로고    scopus 로고
    • Deactivation of the boron-oxygen recombination center in silicon by illumination at elevated temperature
    • B. Lim, K. Bothe, and J. Schmidt Deactivation of the boron-oxygen recombination center in silicon by illumination at elevated temperature Physics Status Solidi (RPL) 2 2008 93 95
    • (2008) Physics Status Solidi (RPL) , vol.2 , pp. 93-95
    • Lim, B.1    Bothe, K.2    Schmidt, J.3
  • 13
    • 78650302750 scopus 로고    scopus 로고
    • Generation and annihilation of boron-oxygen-related recombination centers in compensated p-type and n-type silicon
    • B. Lim, F. Rougieux, D. Macdonald, K. Bothe, and J. Schmidt Generation and annihilation of boron-oxygen-related recombination centers in compensated p-type and n-type silicon Journal of Applied Physics 108 2010 103722-1 103722-9
    • (2010) Journal of Applied Physics , vol.108 , pp. 1037221-1037229
    • Lim, B.1    Rougieux, F.2    Macdonald, D.3    Bothe, K.4    Schmidt, J.5
  • 14
    • 71949084534 scopus 로고    scopus 로고
    • Impact of dopant compensation on the deactivation of boron-oxygen recombination centers in crystalline silicon
    • B. Lim, A. Liu, D. Macdonald, K. Bothe, and J. Schmidt Impact of dopant compensation on the deactivation of boron-oxygen recombination centers in crystalline silicon Applied Physics Letters 95 2009 232109-1 1232109-3
    • (2009) Applied Physics Letters , vol.95 , pp. 2321091-12321093
    • Lim, B.1    Liu, A.2    Macdonald, D.3    Bothe, K.4    Schmidt, J.5
  • 16
    • 0040873514 scopus 로고    scopus 로고
    • Diffusion lengths in solar cells from short-circuit current measurement
    • E.D. Stokes, and T.L. Chun Diffusion lengths in solar cells from short-circuit current measurement Applied Physics Letters 30 1997 425 426
    • (1997) Applied Physics Letters , vol.30 , pp. 425-426
    • Stokes, E.D.1    Chun, T.L.2
  • 17
    • 84867578711 scopus 로고    scopus 로고
    • Influence of the compensation level on the performance of p-type crystalline silicon solar cells: Theoretical calculations and experimental study
    • C.Q. Xiao, D.R. Yang, X.G. Yu, X. Gu, and D.L. Que Influence of the compensation level on the performance of p-type crystalline silicon solar cells: theoretical calculations and experimental study Solar Energy Materials and Solar Cells 107 2012 263 271
    • (2012) Solar Energy Materials and Solar Cells , vol.107 , pp. 263-271
    • Xiao, C.Q.1    Yang, D.R.2    Yu, X.G.3    Gu, X.4    Que, D.L.5
  • 19
    • 34547495336 scopus 로고    scopus 로고
    • Kinetics of the electronically simulated formation of a boron-oxygen complex in crystalline silicon
    • D.W. Palmer, K. Bothe, and J. Schmidt Kinetics of the electronically simulated formation of a boron-oxygen complex in crystalline silicon Physical Review B 76 2007 035210-1 035210-6
    • (2007) Physical Review B , vol.76 , pp. 0352101-0352106
    • Palmer, D.W.1    Bothe, K.2    Schmidt, J.3
  • 20
    • 51749111601 scopus 로고    scopus 로고
    • Slow down of the light-induced-degradation in compensated solar-grade multicrystalline silicon
    • S. Dubois, N. Enjalbert, and J.P. Garandet Slow down of the light-induced-degradation in compensated solar-grade multicrystalline silicon Applied Physics Letters 93 2008 103510-1 103510-3
    • (2008) Applied Physics Letters , vol.93 , pp. 1035101-1035103
    • Dubois, S.1    Enjalbert, N.2    Garandet, J.P.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.