Generation and annihilation of boron-oxygen related defects in boron-doped Czochralski-grown Si solar cells

Journal of Applied Physics

Volumn 91, Issue 8, 2002, Pages 4853-4856

  Vu, Tuong Khanh ^a   Ohshita, Yoshio ^a   Araki, Kenji ^a   Yamaguchi, Masafumi ^a  

^a TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNIHILATION PROCESS; ANNIHILATION RATES; BORON-DOPED; BORON-OXYGEN; CARRIER INJECTION; FORWARD BIAS; GENERATION PROCESS; INDUCED DEFECTS; LIGHT ILLUMINATION; MINORITY CARRIER INJECTION; MINORITY CARRIER LIFETIMES; SI SOLAR CELLS; SILICON CRYSTAL; SOLAR CELL MATERIALS; TEMPERATURE INCREASE; THERMAL-ANNEALING; UNSTABLE STATE;

ACTIVATION ENERGY; OPEN CIRCUIT VOLTAGE; SILICON;

DEFECTS;

EID: 0037091841     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1459609     Document Type: Article

References (7)

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