Gold-thickness-dependent schottky barrier height for charge transfer in metal-assisted chemical etching of silicon

Nanoscale Research Letters

Volumn 8, Issue 1, 2013, Pages 1-7

  Zuo, Zewen ^a   Cui, Guanglei ^a   Shi, Yi ^b   Liu, Yousong ^c   Ji, Guangbin ^c  

^a ANHUI NORMAL UNIVERSITY   (China)

^b NANJING UNIVERSITY   (China)

^c NANJING UNIVERSITY OF AERONAUTICS AND ASTRONAUTICS   (China)

Author keywords

Etching rate; Schottky barrier height; Silicon nanowires; Thickness dependent

Indexed keywords

ALUMINA; ALUMINUM OXIDE; ANODIC OXIDATION; CATALYSIS; CHARGE TRANSFER; GOLD; MESH GENERATION; NANOWIRES; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR METAL BOUNDARIES; SILICON;

ANODIC ALUMINUM OXIDE TEMPLATE; CHARGE TRANSPORT PROCESS; ETCHING RATE; METAL-ASSISTED CHEMICAL ETCHING; SCHOTTKY BARRIER HEIGHTS; SILICON NANOWIRES; THICKNESS DEPENDENT; VERTICALLY ALIGNED;

ETCHING;

EID: 84878746974     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-8-193     Document Type: Article

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