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Volumn 21, Issue 3, 2011, Pages 801-805
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Lightly doped single crystalline porous Si nanowires with improved optical and electrical properties
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Author keywords
[No Author keywords available]
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Indexed keywords
APPLIED VOLTAGES;
BLUE SHIFT;
DOPING LEVELS;
ELECTRICAL CONDUCTIVITY;
ETCHING TEMPERATURE;
METAL-ASSISTED CHEMICAL ETCHING;
NANO SCALE;
NEW OPPORTUNITIES;
OPTICAL AND ELECTRICAL PROPERTIES;
PHOTO-CATALYTIC;
PHOTOLUMINESCENCE EMISSION;
POROUS SI;
SI NANOWIRE;
SI WAFER;
SINGLE-CRYSTALLINE;
CRYSTALLINE MATERIALS;
DOPING (ADDITIVES);
ELECTRIC CONDUCTIVITY OF SOLIDS;
ELECTRIC PROPERTIES;
ELECTRIC WIRE;
ETCHING;
NANOWIRES;
OPTOELECTRONIC DEVICES;
POROUS SILICON;
SEMICONDUCTING SILICON COMPOUNDS;
SILICON WAFERS;
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EID: 78650423922
PISSN: 09599428
EISSN: 13645501
Source Type: Journal
DOI: 10.1039/c0jm02476g Document Type: Article |
Times cited : (43)
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References (25)
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