Components of gating charge movement and S4 voltage-sensor exposure during activation of hERG channels

Journal of General Physiology

Volumn 141, Issue 4, 2013, Pages 431-443

  Wang, Zhuren ^a   Dou, Ying ^a   Goodchild, Samuel J ^a   Es Salah Lamoureux, Zeineb ^a   Fedida, David ^a  

^a UNIVERSITY OF BRITISH COLUMBIA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

(2 (TRIMETHYLAMMONIUM)ETHYL)METHANETHIOSULFONATE; (2-(TRIMETHYLAMMONIUM)ETHYL)METHANETHIOSULFONATE; ERG1 POTASSIUM CHANNEL; MESYLIC ACID DERIVATIVE; POTASSIUM CHANNEL HERG;

AMINO ACID SEQUENCE; ARTICLE; CELL LINE; CHANNEL GATING; CHEMISTRY; DRUG EFFECT; GENETICS; HUMAN; MEMBRANE POTENTIAL; METABOLISM; MISSENSE MUTATION; MOLECULAR DYNAMICS; MOLECULAR GENETICS; PROTEIN TERTIARY STRUCTURE; STATIC ELECTRICITY;

AMINO ACID SEQUENCE; CELL LINE; ETHER-A-GO-GO POTASSIUM CHANNELS; HUMANS; ION CHANNEL GATING; MEMBRANE POTENTIALS; MESYLATES; MOLECULAR DYNAMICS SIMULATION; MOLECULAR SEQUENCE DATA; MUTATION, MISSENSE; PROTEIN STRUCTURE, TERTIARY; STATIC ELECTRICITY;

EID: 84878635952     PISSN: 00221295     EISSN: 15407748     Source Type: Journal    
DOI: 10.1085/jgp.201210942     Document Type: Article

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