메뉴 건너뛰기




Volumn 3, Issue , 2013, Pages

Density of states and its local fluctuations determined by capacitance of strongly disordered graphene

Author keywords

[No Author keywords available]

Indexed keywords


EID: 84878632586     PISSN: None     EISSN: 20452322     Source Type: Journal    
DOI: 10.1038/srep01772     Document Type: Article
Times cited : (28)

References (39)
  • 3
    • 41449084833 scopus 로고    scopus 로고
    • Effect of weak disorder on the density of states in graphene
    • Dora, B., Ziegler, K. & Thalmeier, P. Effect of weak disorder on the density of states in graphene. Physical Review B 77, 115422 (2008).
    • (2008) Physical Review B , vol.77 , pp. 115422
    • Dora, B.1    Ziegler, K.2    Thalmeier, P.3
  • 4
    • 68949149414 scopus 로고    scopus 로고
    • Density of states in disordered graphene
    • Ziegler, K., Dora, B. & Thalmeier, P. Density of states in disordered graphene. Physical Review B 79, 235431 (2009).
    • (2009) Physical Review B , vol.79 , pp. 235431
    • Ziegler, K.1    Dora, B.2    Thalmeier, P.3
  • 5
    • 84855368616 scopus 로고    scopus 로고
    • Quantum transport in chemically modified two-dimensional graphene: From minimal conductivity to Anderson localization
    • Leconte, N. et al. Quantum transport in chemically modified two-dimensional graphene: From minimal conductivity to Anderson localization. Physical Review B 84, 235420 (2011).
    • (2011) Physical Review B , vol.84 , pp. 235420
    • Leconte, N.1
  • 7
    • 43449101898 scopus 로고    scopus 로고
    • Average density of states in disordered graphene systems
    • Wu, S. et al. Average density of states in disordered graphene systems. Physical Review B 77, 195411 (2008).
    • (2008) Physical Review B , vol.77 , pp. 195411
    • Wu, S.1
  • 10
    • 36549091403 scopus 로고
    • Quantum capacitance devices
    • Luryi, S. Quantum capacitance devices. Applied Physics Letters 52, 501-503 (1988).
    • (1988) Applied Physics Letters , vol.52 , pp. 501-503
    • Luryi, S.1
  • 12
    • 3643112312 scopus 로고
    • Negative compressibility of interacting two-dimensional electron and quasiparticle gases
    • Eisenstein, J. P., Pfeiffer, L. N. & West, K. W. Negative compressibility of interacting two-dimensional electron and quasiparticle gases. Physical Review Letters 68, 674-677 (1992).
    • (1992) Physical Review Letters , vol.68 , pp. 674-677
    • Eisenstein, J.P.1    Pfeiffer, L.N.2    West, K.W.3
  • 13
    • 34548446361 scopus 로고    scopus 로고
    • Carrier statistics and quantum capacitance of graphene sheets and ribbons
    • Fang, T., Konar, A., Xing, H. L. & Jena, D. Carrier statistics and quantum capacitance of graphene sheets and ribbons. Applied Physics Letters 91, 092109.
    • Applied Physics Letters , vol.91 , pp. 092109
    • Fang, T.1    Konar, A.2    Xing, H.L.3    Jena, D.4
  • 14
    • 68949175478 scopus 로고    scopus 로고
    • Measurement of the quantum capacitance of graphene
    • Xia, J., Chen, F., Li, J. & Tao, N. Measurement of the quantum capacitance of graphene. Nature Nanotechnology 4, 505-509 (2009).
    • (2009) Nature Nanotechnology , vol.4 , pp. 505-509
    • Xia, J.1    Chen, F.2    Li, J.3    Tao, N.4
  • 15
    • 77957107491 scopus 로고    scopus 로고
    • DensityofStates and zero landau level probedthrough capacitance of graphene
    • Ponomarenko, L.A.etal. DensityofStates and Zero Landau Level Probedthrough Capacitance of Graphene. Physical Review Letters 105, 136801 (2010).
    • (2010) Physical Review Letters , vol.105 , pp. 136801
    • Ponomarenko, L.A.1
  • 16
    • 77951532253 scopus 로고    scopus 로고
    • Quantum capacitance and density of states of graphene
    • Droscher, S. et al. Quantum capacitance and density of states of graphene. Applied Physics Letters 96, 152104 (2010).
    • (2010) Applied Physics Letters , vol.96 , pp. 152104
    • Droscher, S.1
  • 17
    • 79952961488 scopus 로고    scopus 로고
    • Quantum capacitance limited vertical scaling of graphene field-effect transistor
    • Xu, H. et al. Quantum Capacitance Limited Vertical Scaling of Graphene Field-Effect Transistor. ACS Nano 5, 2340-2347 (2011).
    • (2011) ACS Nano , vol.5 , pp. 2340-2347
    • Xu, H.1
  • 18
    • 79961177484 scopus 로고    scopus 로고
    • Electron localization in metal-decorated graphene
    • Li, W. et al. Electron localization in metal-decorated graphene. Physical Review B 84, 045431 (2011).
    • (2011) Physical Review B , vol.84 , pp. 045431
    • Li, W.1
  • 19
    • 77955541472 scopus 로고    scopus 로고
    • Magnetotransport in disordered graphene exposed to ozone: From weak to strong localization
    • Moser, J. et al. Magnetotransport in disordered graphene exposed to ozone: From weak to strong localization. Physical Review B 81, 205445 (2010).
    • (2010) Physical Review B , vol.81 , pp. 205445
    • Moser, J.1
  • 20
    • 79960991432 scopus 로고    scopus 로고
    • Colossal negative magnetoresistance in dilute fluorinated graphene
    • Hong, X., Cheng, S. H., Herding, C. & Zhu, J. Colossal negative magnetoresistance in dilute fluorinated graphene. Physical Review B 83, 085410 (2011).
    • (2011) Physical Review B , vol.83 , pp. 085410
    • Hong, X.1    Cheng, S.H.2    Herding, C.3    Zhu, J.4
  • 21
    • 59149091893 scopus 로고    scopus 로고
    • Control of graphene's properties by reversible hydrogenation: Evidence for graphane
    • Elias, D. C. et al. Control of Graphene's Properties by Reversible Hydrogenation: Evidence for Graphane. Science 323, 610-613 (2009).
    • (2009) Science , vol.323 , pp. 610-613
    • Elias, D.C.1
  • 23
    • 79960791770 scopus 로고    scopus 로고
    • Modifying electronic transport properties of graphene by electron beam irradiation
    • He, Y. H. et al. Modifying electronic transport properties of graphene by electron beam irradiation. Appl. Phys. Lett. 99, 033109 (2011).
    • (2011) Appl. Phys. Lett. , vol.99 , pp. 033109
    • He, Y.H.1
  • 24
    • 78649723950 scopus 로고    scopus 로고
    • Local density of states and Friedel oscillations in graphene
    • Bacsi, A. & Virosztek, A. Local density of states and Friedel oscillations in graphene. Physical Review B 82, 193405 (2010).
    • (2010) Physical Review B , vol.82 , pp. 193405
    • Bacsi, A.1    Virosztek, A.2
  • 25
    • 40849089518 scopus 로고    scopus 로고
    • Effect of a single localized impurity on the local density of states in monolayer and bilayer graphene
    • Bena, C. Effect of a Single Localized Impurity on the Local Density of States in Monolayer and Bilayer Graphene. Physical Review Letters 100, 076601 (2008).
    • (2008) Physical Review Letters , vol.100 , pp. 076601
    • Bena, C.1
  • 26
    • 33947639578 scopus 로고    scopus 로고
    • Local electronic signatures of impurity states in graphene
    • Wehling, T. O. et al. Local electronic signatures of impurity states in graphene. Physical Review B 75, 125425 (2007).
    • (2007) Physical Review B , vol.75 , pp. 125425
    • Wehling, T.O.1
  • 27
    • 84855486667 scopus 로고    scopus 로고
    • Long-wavelength local density of states oscillations near graphene step edges
    • Xue, J. et al. Long-Wavelength Local Density of States Oscillations Near Graphene Step Edges. Physical Review Letters 108, 016801 (2012).
    • (2012) Physical Review Letters , vol.108 , pp. 016801
    • Xue, J.1
  • 28
    • 78149329822 scopus 로고    scopus 로고
    • Imaging localized states in graphene nanostructures
    • Schnez, S. et al. Imaging localized states in graphene nanostructures. Physical Review B 82, 165445 (2010).
    • (2010) Physical Review B , vol.82 , pp. 165445
    • Schnez, S.1
  • 30
    • 79953765858 scopus 로고    scopus 로고
    • Measurements and microscopic model of quantum capacitance in graphene
    • Xu, H., Zhang, Z. & Peng, L. Measurements and microscopic model of quantum capacitance in graphene. Appl. Phys. Lett. 98, 133122 (2011).
    • (2011) Appl. Phys. Lett. , vol.98 , pp. 133122
    • Xu, H.1    Zhang, Z.2    Peng, L.3
  • 31
    • 38849201768 scopus 로고    scopus 로고
    • Observation of electron-hole puddles in graphene using a scanning single-electron transistor
    • Martin, J. et al. Observation of electron-hole puddles in graphene using a scanning single-electron transistor. Nature Physics 4, 144-148 (2008).
    • (2008) Nature Physics , vol.4 , pp. 144-148
    • Martin, J.1
  • 32
    • 0000219248 scopus 로고
    • Distribution functions of current density and local density of states in disordered quantum conductors
    • Lerner, I. V. Distribution functions of current density and local density of states in disordered quantum conductors. Physics Letters A 133, 253-259 (1988).
    • (1988) Physics Letters A , vol.133 , pp. 253-259
    • Lerner, I.V.1
  • 33
    • 0034147774 scopus 로고    scopus 로고
    • Statistics of energy levels and eigenfunctions in disordered systems
    • Mirlin, A. D. Statistics of energy levels and eigenfunctions in disordered systems. Physics Reports 326, 259-382 (2000).
    • (2000) Physics Reports , vol.326 , pp. 259-382
    • Mirlin, A.D.1
  • 34
    • 77955388344 scopus 로고    scopus 로고
    • Distribution of the local density of states as a criterion for Anderson localization: Numerically exact results for various lattices in two and three dimensions
    • Schubert, G., Schleede, J., Byczuk, K., Fehske, H. & Vollhardt, D. Distribution of the local density of states as a criterion for Anderson localization: Numerically exact results for various lattices in two and three dimensions. Physical Review B 81, 155106 (2010).
    • (2010) Physical Review B , vol.81 , pp. 155106
    • Schubert, G.1    Schleede, J.2    Byczuk, K.3    Fehske, H.4    Vollhardt, D.5
  • 35
    • 76249121141 scopus 로고    scopus 로고
    • Visualizing critical correlations near the metal-insulator transition in Ga1-xMnxAs
    • Richardella, A. et al. Visualizing Critical Correlations Near the Metal-Insulator Transition in Ga1-xMnxAs. Science 327, 665-669 (2010).
    • (2010) Science , vol.327 , pp. 665-669
    • Richardella, A.1
  • 36
    • 24244444170 scopus 로고
    • Absence of diffusion in certain random lattices
    • Anderson, P. W. Absence of Diffusion in Certain Random Lattices. Physical Review 109, 1492-1505 (1958).
    • (1958) Physical Review , vol.109 , pp. 1492-1505
    • Anderson, P.W.1
  • 38
    • 77953310895 scopus 로고    scopus 로고
    • Growth and performanceofyttrium oxideasanideal high-k gate dielectric for carbon-based electronics
    • Wang, Z.et al. Growth and PerformanceofYttrium OxideasanIdeal High-k Gate Dielectric for Carbon-Based Electronics. Nano Letters 10, 2024-2030 (2010).
    • (2010) Nano Letters , vol.10 , pp. 2024-2030
    • Wang, Z.1
  • 39
    • 79959806001 scopus 로고    scopus 로고
    • Top-gated graphene field-effect transistors with high normalized transconductance and designable dirac point voltage
    • Xu, H. et al. Top-Gated Graphene Field-Effect Transistors with High Normalized Transconductance and Designable Dirac Point Voltage. ACS Nano 5, 5031-5037 (2011).
    • (2011) ACS Nano , vol.5 , pp. 5031-5037
    • Xu, H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.