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Volumn 8682, Issue , 2013, Pages

Advanced electron beam resist requirements and challenges

Author keywords

Electron beam lithography; LER; Photomask; Requirements; Resists; Resolution; Sensitivity

Indexed keywords

BACKSCATTERED ELECTRONS; ELECTRON BEAM RESIST; ELECTRON-BEAM EXPOSURE; LER; REQUIREMENTS; RESISTS; SEMICONDUCTOR MANUFACTURING; SENSITIVITY;

EID: 84878414080     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.2014527     Document Type: Conference Paper
Times cited : (2)

References (8)
  • 1
    • 78649870565 scopus 로고    scopus 로고
    • Resist process windows in electronbeam lithography
    • Photomask Technology
    • Andrew T. Jamieson, Nathan Wilcox, Wai Y. Kwok and Yong Kwan Kim, "Resist process windows in electronbeam lithography", Proc. SPIE 7823, Photomask Technology 2010 78230B.
    • (2010) Proc. SPIE , vol.7823
    • Jamieson, A.T.1    Wilcox, N.2    Kwok, W.Y.3    Kim, Y.K.4
  • 2
    • 81455148983 scopus 로고    scopus 로고
    • Advanced electron beam resist requirements and challenges
    • Photomask Technology
    • Andrew Jamieson, Yong Kwan Kim, Bennett Olson, Maiying Lu, Nathan Wilcox, "Advanced electron beam resist requirements and challenges", Proc. SPIE 8166, Photomask Technology 2011 816616.
    • (2011) Proc. SPIE , vol.8166 , pp. 816616
    • Jamieson, A.1    Kim, Y.K.2    Olson, B.3    Lu, M.4    Wilcox, N.5
  • 3
    • 84878385533 scopus 로고    scopus 로고
    • International Technology Roadmap for Semiconductors. http://www.itrs.net/
  • 4
    • 84878388345 scopus 로고    scopus 로고
    • 50-keV electron multibeam mask writer for the 11-nm HP node: First results of the proof-of-concept electron multibeam mask exposure tool
    • Aug 07
    • Christof Klein, Hans Loeschner, Elmar Platzgummer, "50-keV electron multibeam mask writer for the 11-nm HP node: first results of the proof-of-concept electron multibeam mask exposure tool", Journal of Micro/Nanolithography, MEMS, and MOEMS. 11(3), 031402 (Aug 07 2012)
    • (2012) Journal of Micro/Nanolithography, MEMS, and MOEMS , vol.11 , Issue.3 , pp. 031402
    • Klein, C.1    Loeschner, H.2    Platzgummer, E.3
  • 7
    • 81455135284 scopus 로고    scopus 로고
    • Pattern placement error due to resist charging effect at 50kV e-beam writer; Mechanism and its correction
    • Choi, J., Bae, S. J., Kim, H. B., Kim, B. G., Cho, H. K., "Pattern placement error due to resist charging effect at 50kV e-beam writer; Mechanism and its correction"Photomask Technology, Proc. of SPIE Vol. 8166 81661Z-1 (2011)
    • (2011) Photomask Technology, Proc. of SPIE , vol.8166
    • Choi, J.1    Bae, S.J.2    Kim, H.B.3    Kim, B.G.4    Cho, H.K.5
  • 8
    • 84861490477 scopus 로고    scopus 로고
    • The novel top-coat material for RLS trade-off reduction in EUVL
    • Advanced Microlithography
    • Ryuji Onishi; Rikimaru Sakamoto; Noriaki Fujitani; Takafumi Endo; Bang-ching Ho, "The novel top-coat material for RLS trade-off reduction in EUVL", Proc. SPIE. 8322, Advanced Microlithography (2012).
    • (2012) Proc. SPIE , vol.8322
    • Onishi, R.1    Sakamoto, R.2    Fujitani, N.3    Endo, T.4    Ho, B.-C.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.