Conductive layer for charge dissipation during electron-beam exposures

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8325, Issue , 2012, Pages

  Bozano, Luisa D ^a   Sooriyakumaran, Ratnam ^a   Sundberg, Linda K ^a   Sanchez, Martha I ^a   Lofano, Elizabeth M ^a   Rettner, Charles T ^a   Nagasawa, Takayuki ^b   Watanabe, Satoshi ^b   Kawaib, Yoshio ^b   Palavesam, Nagarajan ^c   Montano, Gustavo Gandara ^d  

^a IBM ALMADEN RESEARCH CENTER   (United States)

^b SHIN ETSU CHEMICAL CO LTD   (Japan)

^c POLITECNICO DI TORINO   (Italy)

^d NORTHERN ARIZONA UNIVERSITY   (United States)

Author keywords

Charge dissipation; Chemically amplified resists; Conductive discharge layer; E beam lithography; Image placement errors; Line edge roughness; Polyaniline

Indexed keywords

CHARGE DISSIPATION; CHEMICALLY AMPLIFIED RESIST; CONDUCTIVE DISCHARGE LAYER; E-BEAM LITHOGRAPHY; IMAGE PLACEMENT ERROR; LINE EDGE ROUGHNESS;

ELECTRON BEAMS; POLYANILINE;

IMAGE QUALITY;

EID: 84861015799     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.916756     Document Type: Conference Paper

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