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Volumn 8322, Issue , 2012, Pages

The novel top-coat material for RLS trade-off reduction in EUVL

Author keywords

EUV lithography; Out of band; Out of band protection layer (OBPL); Resist

Indexed keywords

ABSORBANCES; ABSORPTION PROPERTY; CRITICAL ISSUES; EUV LIGHT SOURCES; EXTREME ULTRAVIOLETS; HIGH TRANSMITTANCE; LOW POWER; NEXT GENERATION LITHOGRAPHY; OUT OF BAND; PROTECTION LAYERS; RESIST; TOP-COATS;

EID: 84861490477     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.916341     Document Type: Conference Paper
Times cited : (8)

References (7)
  • 2
    • 79955913310 scopus 로고    scopus 로고
    • Out of band radiation effects on resist patterning
    • George, A. S., Naulleau, P. P., "Out of band radiation effects on resist patterning" Proc. SPIE 7969, 796914-1 (2011)
    • (2011) Proc. SPIE , vol.7969 , pp. 796914-7969141
    • George, A.S.1    Naulleau, P.P.2
  • 4
    • 79957960107 scopus 로고    scopus 로고
    • CD uniformity improvement for EUV resists process: EUV resolution enhancement layer
    • Kim, H. W., Na, H. S., Park, C. M., Park, C., Kim, S., Koh, C., Kim, I. S., Cho, H. K., "CD uniformity improvement for EUV resists process: EUV resolution enhancement layer" Proc. SPIE 7969, 796916-1 (2011)
    • (2011) Proc. SPIE , vol.7969 , pp. 796916-7969161
    • Kim, H.W.1    Na, H.S.2    Park, C.M.3    Park, C.4    Kim, S.5    Koh, C.6    Kim, I.S.7    Cho, H.K.8
  • 6
    • 84861519127 scopus 로고    scopus 로고
    • http://www.cxro.lbl.gov/


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.