Fabrication of 28nm pitch Si fins with DSA lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8680, Issue , 2013, Pages

  Schmid, Gerard ^a   Farrell, Richard ^a   Xu, Ji ^a   Park, Chanro ^a   Preil, Moshe ^a   Chakrapani, Vidhya ^b   Mohanty, Nihar ^b   Ko, Akiteru ^b   Cicoria, Michael ^b   Hetzer, David ^b   Somervell, Mark ^c   Rathsack, Benjamen ^c  

^a IBM MICROELECTRONICS   (United States)

^b TEL TECHNOLOGY CENTER   (United States)

^c TOKYO ELECTRON AMERICA INC   (United States)

Author keywords

Block copolymer; Directed self assembly; FinFET

Indexed keywords

DEVICE DESIGN; DEVICE LAYERS; DIRECTED SELF-ASSEMBLY; FINFET; PATTERN DESIGNS; PATTERNING METHODS; ROBUST PATTERNS; THROUGHPUT CAPABILITY;

BLOCK COPOLYMERS; FINS (HEAT EXCHANGE); PHOTOLITHOGRAPHY; SELF ASSEMBLY;

SILICON;

EID: 84878408393     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.2011607     Document Type: Conference Paper

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