SRAM, NAND, DRAM contact hole patterning using block copolymer directed self-assembly guided by small topographical templates

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2011, Pages

  Bao, Xin Yu ^a,b   Yi, He ^a   Bencher, Christopher ^b   Chang, Li Wen ^a,b   Dai, Huixiong ^b   Chen, Yongmei ^b   Chen, P T Joseph ^b   Wong, H S Philip ^a  

^a Stanford University   (United States)

^b APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT HOLES; DIRECTED SELF-ASSEMBLY; HIGH-THROUGHPUT; SRAM CELL;

BLOCK COPOLYMERS; ELECTRON DEVICES; PHOTOLITHOGRAPHY; SELF ASSEMBLY;

STATIC RANDOM ACCESS STORAGE;

EID: 84863053205     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2011.6131510     Document Type: Conference Paper

References (10)

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