Built-in charges and photoluminescence stability of 3D surface-engineered silicon nanocrystals by a nanosecond laser and a direct current microplasma

Journal of Physical Chemistry C

Volumn 117, Issue 21, 2013, Pages 10939-10948

  Svrcek V ^a   Mariotti, D ^b   Mitra, S ^b   Kaneko, T ^a   Li, L ^c   Cvelbar, U ^d   Matsubara, K ^a   Kondo, M ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF ULSTER   (United Kingdom)

^c XIAMEN UNIVERSITY   (China)

^d JO EF STEFAN INSTITUTE   (Slovenia)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION PROPERTIES; OPTOELECTRONIC PROPERTIES; PHOTOLUMINESCENCE PROPERTIES; PROCESSING TECHNIQUE; QUANTUM CONFINEMENT EFFECTS; SILICON NANOCRYSTALS; SURFACE CHEMICAL COMPOSITION; THREE-DIMENSIONAL (3D) SURFACES;

METAMATERIALS; SILICON; SURFACE CHEMISTRY;

PLASMA DEVICES;

EID: 84878364411     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp400292h     Document Type: Article

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