Effect of air exposure on surface properties, electronic structure, and carrier relaxation in PbSe nanocrystals

ACS Nano

Volumn 4, Issue 4, 2010, Pages 2021-2034

  Sykora, Milan ^a   Koposov, Alexey Y ^a   McGuire, John A ^a,b   Schulze, Roland K ^a   Tretiak, Olexandr ^a   Pietryga, Jeffrey M ^a   Klimov, Victor I ^a  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b MICHIGAN STATE UNIVERSITY   (United States)

Author keywords

Auger recombination; Carrier multiplication; Multiexciton generation; Nanocrystals; PbSe; Photochemistry; Quantum dots

Indexed keywords

ABSORPTION ONSET; AIR EXPOSURE; AMBIENT CONDITIONS; AUGER RECOMBINATION; BAND GAPS; CARRIER MULTIPLICATION; CARRIER RELAXATION; CARRIER RELAXATION DYNAMICS; CARRIER TRAPPING; CORE/SHELL STRUCTURE; HEXANE SOLUTIONS; INTERBAND RECOMBINATION; MULTIEXCITON GENERATION; NON-RADIATIVE; PBSE NANOCRYSTALS; PICOSECONDS; PL BANDS; PL INTENSITY; PL MEASUREMENTS; PL QUANTUM YIELD; QUANTUM DOT; RAPID OXIDATION; RELAXATION DYNAMICS; ROOM TEMPERATURE; SUBNANOSECOND; THERMALLY ACTIVATED PROCESS; TIME-RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY;

AUGERS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ENHANCED RECOVERY; EPITAXIAL GROWTH; GAS ADSORPTION; HEXANE; LEAD OXIDE; NANOCRYSTALS; OXIDATION; OXYGEN; QUENCHING; RELAXATION PROCESSES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SURFACE PROPERTIES; TRACE ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

SURFACE STRUCTURE;

EID: 77951719287     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn100131w     Document Type: Article

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