Ohmic contacts to n-type and p-type ZnSe

Solid-State Electronics

Volumn 43, Issue 1, 1999, Pages 113-121

  Park, M R ^a   Anderson, W A ^a   Jeon, M ^b   Luo, H ^c  

^a UNIVERSITY OF MASSACHUSETTS   (United States)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c UNIVERSITY AT BUFFALO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0343058942     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00191-9     Document Type: Article

References (9)

1. Kaufman RG, Dowbor P. J Appl Phys 1974;45:4487.
2. Jeon H, Ding J, Nurmikko AV, Xie W, Grillo DC, Kobayashi M, Gunshor L, Hua GC, Otsuka N. Appl Phys Lett 1992;60:2045.
3. Miyajima T, Okuyama H, Akimoto K. Jpn J Appl Phys 1992;31:L1743.
4. Fijol JJ, Calhoun LC, Park RM, Holloway PH. J Electron Mater 1995;24:143.
5. Rennie J, Onomura M, Nishikawa Y, Saito S, Ishikawa M, Hatakoshi G. Jpn J Appl Phys 1996;35:1664.
6. Tadanaga O, Koide Y, Hashimoto K, Oku T, Teraguchi N, Tomomura Y, Suzuki A, Murakami M. Jpn J Appl Phys 1996;35:1657.
7. Ando K, Hirakawa T, Ohki A, Ohno T, Yonezawa H. Ext. Abstr., 1995 Int. Conf. Solid State Devices and Materials, Osaka, 1995:680.
8. Sze SM. Physics of semiconductor devices. New Jersey: John Wiley and Sons, 1981:304.
9. Fahrenbruch AL, Bube RH. Fundamentals of solar cells. Academic Press, 1983:187-209.