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Materials Research Bulletin

Volumn 48, Issue 8, 2013, Pages 2973-2977

Charge defects-induced electrical properties in bismuth ferrite bilayered thin films

(6) Wu, Jiagang a Zhang, Binyu a Wang, Xiaopeng a Wang, John b Zhu, Jianguo a Xiao, Dingquan a

a SICHUAN UNIVERSITY (China)

b NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

Author keywords

A. Multilayer; A. Thin films; B. Sputtering; D. Electrical properties

Indexed keywords

BISMUTH FERRITES; CHARGE DEFECTS; DEPOSITION TEMPERATURES; ELECTRICAL BEHAVIORS; FATIGUE BEHAVIOR; GROWTH WINDOW; ORIENTATION TRANSITION; PHYSICAL MECHANISM;

DEFECTS; DEPOSITION; FILM PREPARATION; THIN FILMS; VAPOR DEPOSITION;

ELECTRIC PROPERTIES;

EID: 84878293674 PISSN: 00255408 EISSN: None Source Type: Journal
DOI: 10.1016/j.materresbull.2013.03.042 Document Type: Article

Times cited : (11)

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