A giant polarization value of Zn and Mn co-modified bismuth ferrite thin films

Applied Physics Letters

Volumn 102, Issue 5, 2013, Pages

  Wu, Jiagang ^a   Qiao, Sha ^a   Wang, John ^b   Xiao, Dingquan ^a   Zhu, Jianguo ^a  

^a SICHUAN UNIVERSITY   (China)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH FERRITES; ELECTRICAL BEHAVIORS; FERROELECTRIC BEHAVIOR; RADIO FREQUENCY SPUTTERING; SILICON SUBSTRATES;

MANGANESE; ZINC;

THIN FILMS;

EID: 84874055818     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4790380     Document Type: Article

References (24)

1. J. B. Neaton, C. Ederer, U. V. Waghmare, N. A. Spaldin, and K. M. Rabe, Phys. Rev. B 71, 014113 (2005). 10.1103/PhysRevB.71.014113
2. J. F. Li, J. L. Wang, M. Wuttig, R. Ramesh, N. Wang, B. Ruette, A. P. Pyatakov, A. K. Zvezdin, and D. Viehland, Appl. Phys. Lett. 84, 5261 (2004). 10.1063/1.1764944
3. J. Wu and J. Wang, Acta Mater. 58, 1688 (2010). 10.1016/j.actamat.2009. 11.011
4. W. Eerenstein, N. D. Mathur, and J. F. Scott, Nature (London) 442, 759 (2006). 10.1038/nature05023
5. R. Ramesh and N. A. Spaldin, Nat. Mater. 6, 21 (2007). 10.1038/nmat1805
6. G. Catalan and J. F. Scott, Adv. Mater. 21, 2463 (2009). 10.1002/adma.200802849
7. L. W. Martin, Y. H. Chu, and R. Ramesh, Mater. Sci. Eng. R 68, 89 (2010). 10.1016/j.mser.2010.03.001
8. X. Qi, J. Dho, R. Tomov, M. G. Blamire, and J. L. MacManus-Driscoll, Appl. Phys. Lett. 86 (6), 062903 (2005). 10.1063/1.1862336
9. S. A. Fedulov, P. B. Ladyzhinskii, I. L. Pyatigorskaya, and Y. N. Venevtsev, Sov. Phys. Solid State 6, 375 (1964).
10. M. A. Khan, T. P. Comyn, and A. J. Bell, Appl. Phys. Lett. 91, 032901 (2007). 10.1063/1.2759256
11. S. T. Zhang, Y. Zhang, M. H. Lu, C. L. Du, Y. F. Chen, Z. G. Liu, Y. Y. Zhu, N. B. Ming, and X. Q. Pan, Appl. Phys. Lett. 88, 162901 (2006). 10.1063/1.2195927
12. S. Fujino, M. Murakami, V. Anbusathaiah, S.-H. Lim, V. Nagarajan, C. J. Fennie, M. Wutting, L. Salamanca-Riba, and I. Takeuchil, Appl. Phys. Lett. 92, 202904 (2008). 10.1063/1.2931706
13. D. Kan, L. Palova, V. Anbusathaiah, C. J. Cheng, S. Fujino, V. Nagarajan, K. M. Rabe, and I. Takeuchi, Adv. Funct. Mater. 20, 1108 (2010). 10.1002/adfm.200902017
14. R. J. Zeches, M. D. Rossell, J. X. Zhang, A. J. Hatt, Q. He, C. H. Yang, A. Kumar, C. H. Wang, A. Melville, C. Adamo, G. Sheng, Y. H. Chu, J. F. Ihlefeld, R. Erni, C. Ederer, V. Gopalan, L. Q. Chen, D. G. Schlom, N. A. Spaldin, L. W. Martin, and R. Ramesh, Science 326, 977 (2009). 10.1126/science.1177046
15. J. G. Wu and J. Wang, J. Appl. Phys. 106, 104111 (2009). 10.1063/1.3261841
16. S. K. Singh, H. Ishiwara, K. Sato, and K. Maruyama, J. Appl. Phys. 102, 094109 (2007). 10.1063/1.2812594
17. T. Kawae, Y. Terauchi, H. Tsuda, M. Kumeda, and A. Morimoto, Appl. Phys. Lett. 94, 112904 (2009). 10.1063/1.3098408
18. R. Zheng, X. Gao, J. Wang, and S. Ramakrishna, J. Am. Ceram. Soc. 91, 463 (2008). 10.1111/j.1551-2916.2007.02128.x
19. Y. Chishima, Y. Noguchi, Y. Kitanaka, and M. Miyayama, IEEE Trans. Ultrason. Ferroelectr. Freq. Control 57 (10), 2233 (2010). 10.1109/TUFFC.2010. 1683
20. H. Uchida, R. Ueno, H. Funakubo, and S. Koda, J. Appl. Phys. 100, 014106 (2006). 10.1063/1.2210167
21. J. G. Wu, G. Q. Kang, H. J. Liu, and J. Wang, Appl. Phys. Lett. 94, 172906 (2009). 10.1063/1.3127519
22. S. K. Singh, H. Ishiwara, and K. Maruyama, Appl. Phys. Lett. 88, 262908 (2006). 10.1063/1.2218819
23. Y. P. Wang, L. Zhou, M. F. Zhang, X. Y. Chen, J. M. Liu, and Z. G. Liu, Appl. Phys. Lett. 84, 1731 (2004). 10.1063/1.1667612
24. J. G. Wu, J. Wang, D. Q. Xiao, and J. G. Zhu, AIP Adv. 1, 022138 (2011). 10.1063/1.3601362