Electron and hole mobilities at a Si/SiO2 interface with giant valley splitting

Applied Physics Letters

Volumn 102, Issue 19, 2013, Pages

  Niida, Yoshitaka ^a,b,e   Takashina, Kei ^b   Ono, Yukinori ^c,f   Fujiwara, Akira ^c   Hirayama, Yoshiro ^a,d  

^a TOHOKU UNIVERSITY   (Japan)

^b University of Bath   (United Kingdom)

^c NTT Basic Research Laboratories   (Japan)

^d JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^e FUJITSU LABORATORIES LTD   (Japan)

^f UNIVERSITY OF TOYAMA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON SYSTEMS; SILICON-ON-INSULATOR DEVICES; VALLEY SPLITTING;

ELECTRON MOBILITY;

HOLE MOBILITY;

EID: 84877948737     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4803014     Document Type: Article

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