Electrons and holes in a 40 nm thick silicon slab at cryogenic temperatures

Applied Physics Letters

Volumn 94, Issue 14, 2009, Pages

  Takashina, K ^a   Nishiguchi, K ^a   Ono, Y ^a   Fujiwara, A ^a   Fujisawa, T ^a,b   Hirayama, Y ^a,c   Muraki, K ^a  

^a NTT Basic Research Laboratories   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYOGENIC TEMPERATURES; DRAG MEASUREMENTS; ELECTRON-HOLE BILAYERS; LOW TEMPERATURES; SILICON SLABS; THICK LAYERS;

ATOMS; ELECTRONS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 64349089189     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3112602     Document Type: Article

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