Tunneling spectroscopy of electron subbands in thin silicon-on-insulator metal-oxide-semiconductor field-effect transistors

Applied Physics Letters

Volumn 96, Issue 11, 2010, Pages

  Noborisaka, J ^a   Nishiguchi, K ^a   Kageshima, H ^a   Ono, Y ^a   Fujiwara, A ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY OF STATE; ELECTRON SUBBANDS; ENERGY LEVEL; GATE OXIDE; IN-PLANE; KINK STRUCTURES; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; PEAK BROADENING; QUANTIZED ENERGY LEVELS; SILICON ON INSULATOR; SILICON-ON-INSULATORS; SOI THICKNESS; SUB-BANDS; THIN SOI; TUNNELING CURRENT; TUNNELING SPECTROSCOPY;

DIELECTRIC DEVICES; ELECTRON TUNNELING; ION BEAMS; MICROSENSORS; MOS DEVICES; MOSFET DEVICES; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SPECTROSCOPY; TUNNELING (EXCAVATION); WIND TUNNELS;

FIELD EFFECT TRANSISTORS;

EID: 77949749617     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3360224     Document Type: Article

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