Extended interface states enhance valley splitting in Si/ SiO2

Physical Review B - Condensed Matter and Materials Physics

Volumn 82, Issue 24, 2010, Pages

  Saraiva, A L ^a,b   Koiller, Belita ^a   Friesen, Mark ^b  

^a FEDERAL UNIVERSITY OF RIO DE JANEIRO   (Brazil)

^b UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 78651288331     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.82.245314     Document Type: Article

References (21)

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14. An accurate description of the geometry of the first Brillouin zone is not a priority here, since transverse umklapp processes are ruled out at a [001] interface (Refs.).
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21. Note that interface states are not expected to occur in Si/SiGe because both semiconductors have a similar conduction band structure and the interface is well ordered (i.e., epitaxial).