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Volumn 86, Issue , 2013, Pages 1-5
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P-type and N-type multi-gate polycrystalline silicon vertical thin film transistors based on low-temperature technology
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Author keywords
3D structure; Plasma etching; Polycrystalline silicon; Thin film transistor (TFT)
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Indexed keywords
3D STRUCTURE;
ELECTRICAL CHARACTERISTIC;
EQUIVALENT CHANNELS;
INSULATING BARRIERS;
LOW TEMPERATURE TECHNOLOGY;
POLYSILICON ACTIVE LAYERS;
POLYSILICON LAYERS;
VERTICAL THIN-FILM TRANSISTORS;
DEPOSITS;
PLASMA ETCHING;
TEMPERATURE;
THIN FILM TRANSISTORS;
THIN FILMS;
POLYSILICON;
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EID: 84877782334
PISSN: 00381101
EISSN: None
Source Type: Journal
DOI: 10.1016/j.sse.2013.04.021 Document Type: Article |
Times cited : (11)
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References (14)
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