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Volumn 86, Issue , 2013, Pages 1-5

P-type and N-type multi-gate polycrystalline silicon vertical thin film transistors based on low-temperature technology

Author keywords

3D structure; Plasma etching; Polycrystalline silicon; Thin film transistor (TFT)

Indexed keywords

3D STRUCTURE; ELECTRICAL CHARACTERISTIC; EQUIVALENT CHANNELS; INSULATING BARRIERS; LOW TEMPERATURE TECHNOLOGY; POLYSILICON ACTIVE LAYERS; POLYSILICON LAYERS; VERTICAL THIN-FILM TRANSISTORS;

EID: 84877782334     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2013.04.021     Document Type: Article
Times cited : (11)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.