Quasi-vertical multi-tooth thin film transistors based on low-temperature technology (T ≤ 600 °c)

Solid-State Electronics

Volumn 79, Issue , 2013, Pages 26-30

  Zhang, P ^a   Jacques, E ^a   Rogel, R ^a   Coulon, N ^a   Bonnaud, O ^a  

^a IETR   (France)

Author keywords

Plasma etching; Polycrystalline silicon; Thin film transistor (TFT)

Indexed keywords

CHANNEL WIDTHS; ELECTRICAL CHARACTERISTIC; GEOMETRIC PARAMETER; GLASS SUBSTRATES; LOW TEMPERATURE TECHNOLOGY; LOW TEMPERATURES; OVERLAPPING AREA; POLYSILICON LAYERS; SHORT CHANNELS; SOURCE REGION; THREE-LAYER; VERTICAL THIN-FILM TRANSISTORS;

DEPOSITS; FIELD EFFECT TRANSISTORS; PLASMA ETCHING; SUBSTRATES; TEMPERATURE; THIN FILM TRANSISTORS;

POLYSILICON;

EID: 84869509829     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2012.07.014     Document Type: Article

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