Influence of solid-state microstructure on the electronic performance of 5,11-Bis(triethylsilylethynyl) anthradithiophene

Chemistry of Materials

Volumn 25, Issue 9, 2013, Pages 1823-1828

  Yu, Liyang ^a   Li, Xiaoran ^b,c   Pavlica, Egon ^d   Koch, Felix P V ^e   Portale, Giuseppe ^f   Da Silva, Iván ^f,g   Loth, Marsha A ^h   Anthony, John E ^h   Smith, Paul ^a,e   Bratina, Gvido ^d   Kjellander, B K Charlotte ^c   Bastiaansen, Cornelis W M ^b   Broer, Dirk J ^b   Gelinck, Gerwin H ^c   Stingelin, Natalie ^a,i  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^c HOLST CENTRE   (Netherlands)

^d UNIVERSITY OF NOVA GORICA   (Slovenia)

^e ETH ZURICH   (Switzerland)

^f EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^g INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

^h UNIVERSITY OF KENTUCKY   (United States)

ⁱ UNIVERSITY OF FREIBURG   (Germany)

Author keywords

5,11 bis(triethylsilylethynyl) anthradithiophene (TES ADT); field effect transistor; phase behavior; polymorphism; small molecule organic semiconductor

Indexed keywords

ANTHRADITHIOPHENE; ELECTRONIC PERFORMANCE; SMALL-MOLECULE ORGANIC SEMICONDUCTOR; SOLID-STATE PHASIS;

CHEMISTRY; MATERIALS SCIENCE; PHASE BEHAVIOR; POLYMORPHISM;

FIELD EFFECT TRANSISTORS;

EID: 84877734754     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm400369w     Document Type: Article

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