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Direct evidence for the removal of organic impurity from the bottom surface of a blend semiconductor film is obtained by the near-edge X-ray absorption fine structure spectroscopy study on a fluorine-substituted TESADT-PRMS blend film; see Figure S11 Supporting Information
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Direct evidence for the removal of organic impurity from the bottom surface of a blend semiconductor film is obtained by the near-edge X-ray absorption fine structure spectroscopy study on a fluorine-substituted TESADT-PRMS blend film; see Figure S11, Supporting Information.
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