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Applied Physics Letters

Volumn 102, Issue 18, 2013, Pages

Low-voltage driven ∼1.54 μm electroluminescence from erbium-doped ZnO/p+-Si heterostructured devices: Energy transfer from ZnO host to erbium ions

(5) Yang, Yang a Li, Yunpeng a Xiang, Luelue a Ma, Xiangyang a Yang, Deren a

a ZHEJIANG UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ERBIUM DOPED; LIGHT EMITTERS; LIGHT EMITTING DEVICES; LOW-VOLTAGE; MINIMUM LOSS; OPTIC FIBER; OXIDE SEMICONDUCTOR; SILICON BASED OPTOELECTRONICS;

ENERGY TRANSFER; ERBIUM; LIGHT EMISSION; OPTICAL COMMUNICATION; SILICA; SILICON; ZINC OXIDE;

ELECTROLUMINESCENCE;

EID: 84877728072 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4804626 Document Type: Article

Times cited : (41)

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