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Applied Surface Science

Volumn 257, Issue 7, 2011, Pages 2822-2824

1.54 μm emission mechanism of Er-doped zinc oxide thin films

(5) Jang, Y R a Yoo, K H a Ahn, J S a Kim, C a Park, S M a

a Kyung Hee University (South Korea)

Author keywords

1.54 m emission; Er doping; Photoluminescence; ZnO

Indexed keywords

ANNEALING; CADMIUM COMPOUNDS; ENERGY TRANSFER; II-VI SEMICONDUCTORS; IONS; OXIDE FILMS; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; PULSED LASERS; SEMICONDUCTOR DOPING; THIN FILMS; X RAY DIFFRACTION; ZINC OXIDE;

BAND-EDGE EMISSIONS; CRYSTALLINITIES; DEFECT EMISSION; EMISSION MECHANISM; ER-DOPING; RADIATIVE RELAXATION; SUBSTRATE TEMPERATURE; ZINC OXIDE (ZNO);

ERBIUM COMPOUNDS;

EID: 79251597505 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2010.10.069 Document Type: Article

Times cited : (31)

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