In situ probing of the evolution of irradiation-induced defects in copper

Journal of Nuclear Materials

Volumn 439, Issue 1-3, 2013, Pages 185-191

  Li, N ^a   Hattar, K ^b   Misra, A ^a  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

D. TRANSMISSION ELECTRON MICROSCOPES (TEM); DEFECT EVOLUTION; HIGH-RESOLUTION TEM; IN-SITU PROBING; IRRADIATION DOSE; IRRADIATION-INDUCED DEFECTS; ROOM TEMPERATURE; STACKING FAULT TETRAHEDRON;

DEFECT DENSITY; TRANSMISSION ELECTRON MICROSCOPY;

IRRADIATION;

EID: 84877340987     PISSN: 00223115     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnucmat.2013.04.013     Document Type: Article

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