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Physical Review B - Condensed Matter and Materials Physics

Volumn 84, Issue 10, 2011, Pages

Influence of interface sink strength on the reduction of radiation-induced defect concentrations and fluxes in materials with large interface area per unit volume

(4) Demkowicz, M J a Hoagland, R G b Uberuaga, B P b Misra, A b

a Massachusetts Institute of Technology Cambridge (United States)

b LOS ALAMOS NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 80053602963 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.84.104102 Document Type: Article

Times cited : (68)

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