Interface enabled defects reduction in helium ion irradiated Cu/V nanolayers

Journal of Nuclear Materials

Volumn 407, Issue 3, 2010, Pages 178-188

  Fu, E G ^a,b   Misra, A ^b   Wang, H ^a   Shao, Lin ^c   Zhang, X ^a  

^a Department of Electrical and Computer Engineering   (United States)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

^c TEXAS A AND M UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HELIUM BUBBLES; HELIUM ION; ION IRRADIATION; LATTICE EXPANSION; LAYER THICKNESS; NANO LAYERS; PEAK DOSE; RADIATION TOLERANCES; RADIATION-INDUCED; ROOM TEMPERATURE;

DEFECTS; HARDENING; HELIUM; IONS; POINT DEFECTS;

RADIATION HARDENING;

EID: 78649485517     PISSN: 00223115     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnucmat.2010.10.011     Document Type: Article

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