SCOPUS 정보 검색 플랫폼

Applied Surface Science

Volumn 274, Issue , 2013, Pages 85-88

Complementary resistive switching mechanism in Ti-based triple TiO x /TiN/TiO x and TiO x /TiO x N y /TiO x matrix

(4) Lee, Ah Rahm a Bae, Yoon Cheol a Im, Hyun Sik b Hong, Jin Pyo a

a Hanyang University (South Korea)

b Dongguk University (South Korea)

Author keywords

Complementary resistive switching; CRS; ReRAM; Resistive switching; Titanium oxide

Indexed keywords

CHROMIUM; PLATINUM COMPOUNDS; REDOX REACTIONS; RRAM; TIN; TITANIUM NITRIDE; TITANIUM OXIDES;

BIPOLAR SWITCHING; FILAMENTARY CONDUCTION; ION DRIFTS; MEMORY OPERATIONS; RESISTIVE SWITCHING; RESISTIVE SWITCHING MECHANISMS; SELECTION DEVICES; SWITCHING ELEMENTS;

SWITCHING;

EID: 84876926429 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2013.02.100 Document Type: Article

Times cited : (18)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.