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Journal of Materials Chemistry C

Volumn 1, Issue 3, 2013, Pages 418-421

A ferroelectric tunnel junction based on the piezoelectric effect for non-volatile nanoferroelectric devices

(6) Yuan, Shuoguo a Wang, Jinbin a Zhong, Xiangli a Wang, Fang a Li, Bo a Zhou, Yichun a

a XIANGTAN UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

DESIGN CONCEPT; ELECTROSTATIC EFFECT; FERROELECTRIC TUNNEL JUNCTIONS; NON-VOLATILE; POLARIZATION SWITCHING; RETENTION TIME; SOLID-STATE MEMORY;

ELECTROSTATIC DEVICES; FERROELECTRICITY; INFORMATION TECHNOLOGY; PIEZOELECTRICITY;

TUNNEL JUNCTIONS;

EID: 84876889862 PISSN: 20507534 EISSN: 20507526 Source Type: Journal
DOI: 10.1039/c2tc00097k Document Type: Article

Times cited : (24)

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