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Applied Physics Letters

Volumn 97, Issue 21, 2010, Pages

Enhanced ferroelectric and piezoelectric properties in doped lead-free (Bi0.5Na0.5)0.94 Ba0.06 TiO 3 thin films

(6) Wang, D Y a Chan, N Y b Li, S a Choy, S H b Tian, H Y c Chan, H L W b

a UNIVERSITY OF NEW SOUTH WALES (Australia)

b HONG KONG POLYTECHNIC UNIVERSITY (Hong Kong)

c CURTIN UNIVERSITY (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CO-DOPED; DOPED FILMS; DOPING EFFECTS; ELECTRICAL PROPERTY; EPITAXIALLY GROWN; FERROELECTRIC AND PIEZOELECTRIC PROPERTIES; IV CHARACTERISTICS; LEAD-FREE; MN-DOPING; MORPHOTROPIC PHASE BOUNDARIES; ORDER OF MAGNITUDE; PIEZOELECTRIC COEFFICIENT; REMANENT POLARIZATION; RESISTANCE SWITCHING EFFECT; TIO;

BARIUM; CERIUM; CERIUM COMPOUNDS; CRYSTALLOGRAPHY; ELECTRIC PROPERTIES; FERROELECTRICITY; MANGANESE; PIEZOELECTRICITY; SODIUM; THIN FILMS;

DOPING (ADDITIVES);

EID: 78649571119 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3518484 Document Type: Article

Times cited : (101)

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