Electrolyte-gated SmCoO3 thin-film transistors exhibiting thickness-dependent large switching ratio at room temperature

Advanced Materials

Volumn 25, Issue 15, 2013, Pages 2158-2161

  Xiang, Ping Hua ^a,b,e   Asanuma, Shutaro ^a,b   Yamada, Hiroyuki ^a   Sato, Hiroshi ^a   Inoue, Isao H ^a   Akoh, Hiroshi ^a,b   Sawa, Akihito ^a   Kawasaki, Masashi ^c,d   Iwasa, Yoshihiro ^c,d  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

^d RIKEN   (Japan)

^e EAST CHINA NORMAL UNIVERSITY   (China)

Author keywords

correlated electron oxides; FET; metal insulator transition

Indexed keywords

CARRIER CONFINEMENTS; CORRELATED ELECTRONS; ELECTRIC DOUBLE LAYER; ELECTRIC DOUBLE-LAYER TRANSISTORS; FET; SCREENING LENGTHS; STRONGLY CORRELATED ELECTRON SYSTEM; THICKNESS DEPENDENCE;

IONIC LIQUIDS; SEMICONDUCTOR INSULATOR BOUNDARIES;

ELECTROCHEMISTRY;

EID: 84876274548     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201204505     Document Type: Article

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