Room-temperature carrier transport in high-performance short-channel Silicon nanowire MOSFETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2012, Pages

  Majumdar, Amlan ^a   Bangsaruntip, Sarunya ^a   Cohen, Guy M ^a   Gignac, Lynne M ^a   Guillorn, Michael ^a   Frank, Martin M ^a   Sleight, Jeffrey W ^a   Antoniadis, Dimitri A ^b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b Department of Electrical Engineering and Computer Science   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE LENGTH; MOSFETS; ROOM TEMPERATURE; SHORT CHANNELS; SI NANOWIRE; SILICON NANOWIRE MOSFETS; THERMAL VELOCITY;

ELECTRON DEVICES; NANOWIRES; SILICON;

MOSFET DEVICES;

EID: 84876146846     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2012.6479003     Document Type: Conference Paper

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