Observation of three-dimensional shell filling in cylindrical silicon nanowire single electron transistors

Applied Physics Letters

Volumn 90, Issue 18, 2007, Pages

  Cho, K H ^a,c   Jung, Y C ^a   Hong, B H ^a   Hwang, S W ^a   Oh, J H ^b   Ahn, D ^b   Suk, S D ^c   Yeo, K H ^c   Kim, D W ^c   Park, D ^c   Lee, W S ^c  

^a Korea University   (South Korea)

^b University of Seoul   (South Korea)

^c SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

HARMONIC CONFINEMENT; SHELL FILLING; SILICON NANOWIRES; SINGLE ELECTRON TRANSISTORS (SET);

GATE DIELECTRICS; NANOCRYSTALLINE SILICON; QUANTUM CONFINEMENT; SEMICONDUCTOR QUANTUM DOTS; TRANSISTORS;

NANOWIRES;

EID: 34247847935     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2734490     Document Type: Article

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