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Volumn 50, Issue 8 PART 1, 2011, Pages

Structural and electrical properties of solution-processed gallium-doped indium oxide thin-film transistors

(7) Park, Jee Ho a Choi, Won Jin a,d Chae, Soo Sang a Oh, Jin Young a Lee, Se Jong a,b Song, Kie Moon a,c Baik, Hong Koo a

a Yonsei University (South Korea)

b Kyungsung University (South Korea)

c Konkuk University (South Korea)

d Korea Research Institute of Chemical Technology (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS PHASE; CHANNEL MATERIALS; CRYSTALLINITIES; ELECTRICAL PROPERTY; GALLIUM-DOPED INDIUM OXIDES; ON/OFF CURRENT RATIO; SOLUTION-PROCESSED; STRUCTURAL AND ELECTRICAL PROPERTIES; SUBTHRESHOLD SLOPE; VISIBLE REGION;

AMORPHOUS FILMS; ELECTRIC PROPERTIES; ELECTRON MOBILITY; GALLIUM; THIN FILM TRANSISTORS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

INDIUM;

EID: 80051974169 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.50.080202 Document Type: Article

Times cited : (30)

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