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Physical Review Letters

Volumn 110, Issue 14, 2013, Pages

Origins of structural hole traps in hydrogenated amorphous silicon

(4) Johlin, Eric a Wagner, Lucas K b Buonassisi, Tonio a Grossman, Jeffrey C a

a MASSACHUSETTS INSTITUTE OF TECHNOLOGY (United States)

b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN (United States)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; AB INITIO STRUCTURE; DEEP HOLE TRAP; GEOMETRIC FACTORS; HYDROGENATED AMORPHOUS SILICON (A-SI:H); RELATIVE CONTRIBUTION; STRUCTURAL HOLES; TRAP DISTRIBUTIONS;

AMORPHOUS SILICON; DENSITY FUNCTIONAL THEORY; HYDROGENATION; SILICON;

HOLE TRAPS;

HYDROGEN; SILICON;

CHEMICAL MODEL; CHEMICAL STRUCTURE; CHEMISTRY;

HYDROGEN; MODELS, CHEMICAL; MODELS, MOLECULAR; SILICON;

EID: 84875970142 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.110.146805 Document Type: Article

Times cited : (23)

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