Dangling-bond levels and structure relaxation in hydrogenated amorphous silicon

Physical Review B - Condensed Matter and Materials Physics

Volumn 56, Issue 15, 1997, Pages 9197-9200

  Biswas, R ^a   Li, Qiming ^a   Yoon, Y ^a   Branz, H ^b  

^a IOWA STATE UNIVERSITY   (United States)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005003148     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.56.9197     Document Type: Article

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