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Physical Review Letters

Volumn 107, Issue 25, 2011, Pages

Large-scale simulations of a-Si:H: The origin of mdgap sates rvisited

(4) Khomyakov, P A a Andreoni, Wanda a,b Afify, N D a,c Curioni, Alessandro a

a IBM RESEARCH ZURICH (Switzerland)

b EPFL (Switzerland)

c IBM Center for Advanced Studies in Cairo (Egypt)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; BAND TAIL; HIGHLY STRAINED; LARGE SCALE SIMULATIONS; MICROSCOPIC DEFECTS; PHOTOINDUCED DEGRADATION; QUANTUM SIMULATIONS; STAEBLER-WRONSKI EFFECT;

DANGLING BONDS; HYDROGEN; PHOTODEGRADATION; QUANTUM CHEMISTRY;

SILICON;

EID: 83655193089 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.107.255502 Document Type: Article

Times cited : (37)

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