Thermally activated non-linearity of device in resistance-switching memory for cross-point array applications

Applied Physics Letters

Volumn 102, Issue 12, 2013, Pages

  Woo, Jiyong ^a   Kim, Seonghyun ^b   Lee, Wootae ^b   Lee, Daeseok ^a   Park, Sangsu ^b   Choi, Godeuni ^a   Cha, Euijun ^a   Hwang, Hyunsang ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYERED STRUCTURE; CROSS-POINT ARRAY; LOW-RESISTANCE STATE; MEMORY CELL; NONLINEAR CONDUCTION; OPERATING CURRENTS; PROGRAMMING CURRENTS; THERMALLY ACTIVATED;

PHYSICAL PROPERTIES;

PHYSICS;

EID: 84875933362     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4799148     Document Type: Article

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