SCOPUS 정보 검색 플랫폼

AIP Advances

Volumn 3, Issue 3, 2013, Pages

Effect of etching stop layer on characteristics of amorphous IGZO thin film transistor fabricated at low temperature

(5) Li, Xifeng a Xin, Enlong a Chen, Longlong a Shi, Jifeng a Zhang, Jianhua a

a SHANGHAI UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; FABRICATION; GALLIUM COMPOUNDS; II-VI SEMICONDUCTORS; SEMICONDUCTING INDIUM COMPOUNDS; SILANES; SILICON; TEMPERATURE; THIN FILM CIRCUITS; THIN FILMS; THRESHOLD VOLTAGE; ZINC OXIDE;

AMORPHOUS INDIUMGALLIUM-ZINC OXIDE (A-IGZO) THIN-FILM TRANSISTOR (TFTS); DEPOSITION PARAMETERS; ETCHING STOP; FIELD-EFFECT MOBILITIES; GOOD STABILITY; GROWTH PROCESS; LOW TEMPERATURES; TRANSFER CHARACTERISTICS;

THIN FILM TRANSISTORS;

EID: 84875851551 PISSN: None EISSN: 21583226 Source Type: Journal
DOI: 10.1063/1.4798305 Document Type: Article

Times cited : (38)

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