Reuse of GaAs substrates for epitaxial lift-off by employing protection layers

Journal of Applied Physics

Volumn 111, Issue 3, 2012, Pages

  Lee, Kyusang ^a   Zimmerman, Jeramy D ^a   Xiao, Xin ^a   Sun, Kai ^a   Forrest, Stephen R ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPES; CHEMICAL COMPOSITIONS; COST COMPETITIVENESS; ENERGY DISPERSIVE SPECTROMETRY; EPITAXIAL LIFTOFF; GAAS SOLAR CELLS; GAAS SUBSTRATES; GAAS SURFACES; GAAS WAFER; HIGH POWER CONVERSION; LATTICE-MATCHED; P-N JUNCTION; POWER CONVERSION EFFICIENCIES; PROTECTION LAYERS; REDUCED COST; SOLAR CELL TECHNOLOGY; SUBSTRATE SURFACE; SUN ILLUMINATION; WAFER SURFACE;

ATOMIC FORCE MICROSCOPY; COMPETITION; CONVERSION EFFICIENCY; ELECTRONIC PROPERTIES; EPITAXIAL GROWTH; GALLIUM ARSENIDE; SEMICONDUCTOR JUNCTIONS; SURFACE ROUGHNESS; WET ETCHING;

SEMICONDUCTING GALLIUM;

EID: 84863165522     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3684555     Document Type: Article

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