An improvement of light extraction efficiency for GaN-based light emitting diodes by selective etched nanorods in periodic microholes

Optics Express

Volumn 21, Issue 6, 2013, Pages 7125-7130

  Kim, Seung Hwan ^a,b   Park, Hyun Ho ^a   Song, Young Ho ^b   Park, Hyung Jo ^b   Kim, Jae Beom ^b   Jeon, Seong Ran ^b   Jeong, Hyun ^c   Jeong, Mun Seok ^c   Yang, Gye Mo ^a  

^a Chonbuk National University   (South Korea)

^b Korea Photonics Technology Institute (KOPTI)   (South Korea)

^c Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EFFICIENCY; GALLIUM ALLOYS; GALLIUM NITRIDE; NANORODS; PERIODIC STRUCTURES; REFRACTIVE INDEX;

CONFOCAL SCANNING; GAN BASED LED; LIGHT EXTRACTION EFFICIENCY (LEE); LIGHT-EXTRACTION EFFICIENCY; RANDOMLY DISTRIBUTED; SCATTERING CENTERS; SELECTIVE ETCHING; TOTAL INTERNAL REFLECTIONS;

LIGHT EMITTING DIODES;

GALLIUM; GALLIUM NITRIDE; NANOTUBE;

ARTICLE; CHEMISTRY; ENERGY TRANSFER; EQUIPMENT; EQUIPMENT DESIGN; EQUIPMENT FAILURE; ILLUMINATION; NANOTECHNOLOGY; SEMICONDUCTOR; SURFACE PLASMON RESONANCE;

ENERGY TRANSFER; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GALLIUM; LIGHTING; NANOTECHNOLOGY; NANOTUBES; SEMICONDUCTORS; SURFACE PLASMON RESONANCE;

EID: 84875696565     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.21.007125     Document Type: Article

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