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Applied Physics Letters

Volumn 100, Issue 6, 2012, Pages

InGaN light-emitting diodes with indium-tin-oxide sub-micron lenses patterned by nanosphere lithography

(3) Zhang, Q a Li, K H a Choi, H W a

a UNIVERSITY OF HONG KONG (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

DAMAGE-FREE; EMISSION CHARACTERISTICS; FINITE DIFFERENCE TIME DOMAIN SIMULATIONS; GAN LIGHT-EMITTING DIODES; INDIUM TIN OXIDE; LENS ARRAY; LIGHT EXTRACTION; MICRO LENS; NANO SPHERE LITHOGRAPHY; OPTICAL OUTPUT POWER; SELF-ASSEMBLED SILICA; SEMICONDUCTOR LAYERS; SUBMICRON;

DIODES; GALLIUM NITRIDE; INDIUM; LIGHT EMISSION; NANOSPHERES; SEMICONDUCTOR DIODES; SILICA; TIN;

LIGHT EMITTING DIODES;

EID: 84863160499 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3684505 Document Type: Article

Times cited : (34)

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