High-quality InAlN/GaN high electron mobility transistors on Si (111) by metalorganic chemical vapor deposition

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2006, Pages 257-260

  Watanabe, Noriyuki ^a   Yokoyama, Haruki ^a   Hiroki, Masanobu ^a   Oda, Yasuhiro ^a   Kobayashi, Takashi ^a   Yagi, Takuma ^b  

^a NTT CORPORATION   (Japan)

^b NTT Advance Technology Corporation   (Japan)

Author keywords

GaN; HEMT; InAlN; MOCVD; Si

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMMUNICATION CHANNELS (INFORMATION THEORY); CRYSTALS; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; HETEROJUNCTIONS; INTEGRATED CIRCUITS; METALLIZING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROSCOPIC EXAMINATION; OPTICAL DESIGN; SCANNING PROBE MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR MATERIALS; SURFACE ROUGHNESS; TRANSISTORS; VAPOR DEPOSITION; VAPORS; X RAY DIFFRACTION ANALYSIS;

(1 1 0) SURFACE; ATOMIC FORCE MICROSCOPY (AFM); CHEMICAL VAPORS; COMPOUND SEMICONDUCTOR (CS); FLAT SURFACES; HETERO INTERFACES; HETEROSTRUCTURES; HIGH QUALITY (HQ); HIGH-ELECTRON-MOBILITY (HEM); OPTIMAL CONDITIONS; SI (111); SI(2 1 1) SUBSTRATES; X-RAY DIFFRACTION MEASUREMENTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 46149099361     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2006.319948     Document Type: Conference Paper

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